%0 Journal Article
%4 dpi.inpe.br/plutao/2012/11.28.18.01
%2 dpi.inpe.br/plutao/2012/11.28.18.01.28
%@doi 10.1134/S102745101208006X
%@issn 1027-4510
%F lattes: 3801575713681461 6 AmirovZiGoNaAbRa:2012:InInCo
%T Investigations of the inductively coupled argon plasma sputtering of Pb1 − x Sn x Te ternary solid solution
%D 2012
%A Amirov, I. I.,
%A Zimin, S. P.,
%A Gorlachev, E. S.,
%A Naumov, V. V.,
%A Abramof, E.,
%A Rappl, Paulo Henrique de Oliveira,
%@affiliation Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, ul. Universitetskaya 21, Yaroslavl, 150007 Russia
%@affiliation Microelectronics Department, Yaroslavl State University, ul. Sovetskaya 14, Yaroslavl, 150000 Russia
%@affiliation Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, ul. Universitetskaya 21, Yaroslavl, 150007 Russia
%@affiliation Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, ul. Universitetskaya 21, Yaroslavl, 150007 Russia
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress rappl@las.inpe.br
%B Journal of Surface Investigation: X-ray, Synchroton and Neutron Techniques
%V 6
%N 4
%P 643-646
%K Processo de Sputtering em calcogenetos de chumbo.
%X There is currently no general theory of multicom_ ponent material sputtering with variations in composi_ tion; however this process is becoming more and more widely used because of the increasingly important role of plasma technologies in forming nanostructured materials. The sputtering rates for binary compounds of lead chalcogenides PbX (X = Te, Se, S) were inves_ tigated in detail in [1, 2]. For the sputtering of solid solutions based on PbX, a model [3] based on taking the sublimation energy of the binary compounds of a ternary solution into account was proposed. For func_ tional testing of this theory, it is effective to use ternary compounds comprised of binary compounds with almost identical binding energies, resulting in uniformity of the sputtering rates upon variations in the composition. The lead telluridetin telluride Pb1 xSnxTe solid solutions were investigated as such test materials. These materi_ als are one of the most advanced multicomponent semiconductors, and are widely used in IR optoelec_ tronics [47] and in a new generation of thermoelec_ tric devices [8]. Their key feature is the opportunity to make task_specific changes of the band_gap width and refraction index [4, 5] by changing the mole fraction x within the range from 0 to 1. The band_gap width of Pb1 xSnxTe increases with decreasing x, then becomes equal to zero, and then increases to a value corre_ sponding to SnTe; thus, the band edges remain inverted. Development of the technology of plasma treatment of these materials is necessary for the effec_ tive and highly economical production of active ele_ ments (photonic crystals, microdisks, and mesastruc_ tures) based on binary compounds and ternary solid solutions integrated onto single_crystal substrates. The purpose of this work was to investigate the rates of sputtering in argon plasma for Pb1 xSnxTe ternary solid solutions with mole fractions varying within the entire range of x from 0 to 1 in view of the crystalline state of the films.
%@language en
%3 10.1134_S102745101208006X.pdf
%O Setores de Atividade: Pesquisa e desenvolvimento científico.
%O published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2012, No. 8, pp. 17–20.